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| NTE489 Silicon P-Channel JFET Transistor General Purpose AF Amplifier Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Gate-Drain Voltage (Note 1), VGD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate-Source Voltage (Note 1), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.27mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +135C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1/16" from case for 10sec), TL . . . . . . . . . . . . . . . . . . . +300C Note 1. Geometry is symmetrical. Units may be operated with source and drain leads interchanged. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Static Characteristics Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate Current Saturation Drain Current Dynamic Characteristics Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capaticance Equivalent Short-Circuit Input Noise Voltage gfs gos Ciss Crss en VDS = -15V, VGS = 0, f = 1kHz, Note 3 VDS = -15V, VGS = 0, f = 1kHz VDS = -15V, VGS = 0, f = 1MHz VDS = -15V, VGS = 0, f = 1MHz VDS = -10V, ID = -2mA, f = 1kHz 6000 - - - - - 15000 mho 200 - - - mho pF pF nV pHz V(BR)GSS IG = 1A, VDS = 0 IGSS VGS(off) IG IDSS VGS = 20V, VDS = 0, Note 2 ID = -1nA, VDS = -15V ID = -2mA, VDG = -15V, Note 2 VDS = -15V, VGS = 0 30 - 0.5 - -2 - - - 15 - - 200 2.0 - -15 V pA V pA mA Symbol Test Conditions Min Typ Max Unit - 32 4 6 Note 2. Approximately doubles for every 10C increase in TA. Note 3. Pulse test duration = 2ms. .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max DGS .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
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